Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes

Abstract

Internal photoemission has been observed in GaAs-Ga0.52In 0.48P p-I-N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy-band discontinuities in this heterostructure material system. The results indicate a conduction-band discontinuity of ΔEc= 108±6 meV at room temperature.