Abstract
Internal photoemission has been observed in GaAs-Ga0.52In 0.48P p-I-N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy-band discontinuities in this heterostructure material system. The results indicate a conduction-band discontinuity of ΔEc= 108±6 meV at room temperature.
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CITATION STYLE
Haase, M. A., Hafich, M. J., & Robinson, G. Y. (1991). Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes. Applied Physics Letters, 58(6), 616–618. https://doi.org/10.1063/1.104574
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