Prmno3-based scaled (<300 nm) nonlinear rram device for selector-less array application

Abstract

Inherent nonlinearity (NL) in low resistance state (LRS) current of resistive random access memory (RRAM) devices is essential to reduce current leakage due to sneak paths in selector-less RRAM arrays. In this work, we reporta PrMnO3ði:e: PMOÞ based bipolar resistive random access memory (RRAM) with high nonlinearity (NL) and memory window (MW). The presented W/PMO/Pt device exhibits a read NL of 97 ± 4 and set NL of 40 ± 4 (2.5x improvement) along with a MW of 150 ± 2. The presented device also exhibitsRESET voltage controlled multiple resistance levels for multi-bit operation. Further, area scaling of currents is demonstrated up to 300 nm device dimension. The obtained NL & MW values are benchmarked against literature. High NL, MW and scaling in PMO-based RRAM is being reported for the first time in this work.