Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling

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Abstract

The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time decreases for the upper level, the mobility of the level increases due to an additional term in the electron velocity. © 2007 American Institute of Physics.

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Chen, L., Ma, Z., Cao, J. C., Zhang, T. Y., & Zhang, C. (2007). Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling. Applied Physics Letters, 91(10). https://doi.org/10.1063/1.2783203

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