Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors

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Abstract

The limit of the vanishing Debye length (the charge neutral limit) in a non-linear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates. © 2002 Elsevier Science (USA).

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Gasser, I., Hsiao, L., Markowich, P. A., & Wang, S. (2002). Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors. Journal of Mathematical Analysis and Applications, 268(1), 184–199. https://doi.org/10.1006/jmaa.2001.7813

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