Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

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Abstract

We report a Raman study of the so-called buffer layer with (6√3 6√3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.

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Fromm, F., Oliveira, M. H., Molina-Sánchez, A., Hundhausen, M., Lopes, J. M. J., Riechert, H., … Seyller, T. (2013). Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics, 15. https://doi.org/10.1088/1367-2630/15/4/043031

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