We report a Raman study of the so-called buffer layer with (6√3 6√3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.
CITATION STYLE
Fromm, F., Oliveira, M. H., Molina-Sánchez, A., Hundhausen, M., Lopes, J. M. J., Riechert, H., … Seyller, T. (2013). Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics, 15. https://doi.org/10.1088/1367-2630/15/4/043031
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