The electrical properties of beta-gallium oxide (β-Ga2O3) and gallium arsenide semiconductors were characterized using the emerging terahertz time-domain ellipsometry (THz-TDE) technique. The dielectric and conductivity properties were obtained from the complex ratio of the measured p- and s-polarized THz pulses reflected from the samples. The carrier concentration and mobility were then deduced using the Drude model, and the results showed good accuracy. This work demonstrates THz-TDE as a promising tool for characterizing semiconductors, especially those with high carrier concentrations and significant absorption in the THz region.
CITATION STYLE
Iwamoto, T., Agulto, V. C., Liu, S., Wang, Y., Mag-Usara, V. K., Fujii, T., … Nakajima, M. (2023). Characterization of electrical properties of β-Ga2O3 epilayer and bulk GaAs using terahertz time-domain ellipsometry. Japanese Journal of Applied Physics, 62(SF). https://doi.org/10.35848/1347-4065/acbc84
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