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Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si

Journal of Physics: Conference Series (2018) 1124(4)
DOI: 10.1088/1742-6596/1124/4/041034
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Abstract

The work is devoted to development of the post-growth technology for direct study of the top subcell based on p-i-n junction with the GaPAs i-layer in the double-junction solar cell grown on silicon wafer. It allowed to more precisely measure quantum efficiency (QE) of the top subcell without additional IR-illumination for saturation of the bottom subcell in wafer. In result, measured QE of mesa-structure shows more reliable results without artefacts in spectra.

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CITATION STYLE

APA

Baranov, A. I., Gudovskikh, A. S., Kudryashov, D. A., Morozov, I. A., Mozharov, A. M., & Zelentsov, K. S. (2018). Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si. In Journal of Physics: Conference Series (Vol. 1124). IOP Publishing Ltd. https://doi.org/10.1088/1742-6596/1124/4/041034

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