Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

Abstract

The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other. © 2013 AIP Publishing LLC.