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A 5291-ppi organic light-emitting diode display using field-effect transistors including a c-axis aligned crystalline oxide semiconductor

Journal of the Society for Information Display (2019) 27(8) 497-506
DOI: 10.1002/jsid.822
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Abstract

C-axis-aligned crystalline-oxide semiconductor field-effect transistor (CAAC-OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light-emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC-OS FETs as the backplane.

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APA

Katsui, S., Kobayashi, H., Nakagawa, T., Tamatsukuri, Y., Shishido, H., Uesaka, S., … Yamazaki, S. (2019). A 5291-ppi organic light-emitting diode display using field-effect transistors including a c-axis aligned crystalline oxide semiconductor. Journal of the Society for Information Display, 27(8), 497–506. https://doi.org/10.1002/jsid.822

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