Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2by Controlling CF4Atmosphere with Ar and O2Additives in ICP

Abstract

An isotropic etching, etch rate and surface roughness of Si, Ge and Si0.8Ge0.2 subjected to CF4/Ar/O2 plasma has been studied using inductively coupled plasma (ICP) system. First, we applied the etching parameters on the silicon substrate to observe the etching rate using carbon tetrafluoride (CF4) under different flow rates and choose the parameters of high etch rate. The chosen parameters for silicon was CF4 (60 sccm) and etching in different ratios of argon (Ar) and oxygen (O2) were also discussed. Second, it also reports on selective isotropic etching for germanium (Ge) and Si0.8Ge0.2 by ultrahigh vacuum chemical vapor deposition (UHVCVD) and was etched under selected conditions used for silicon under different atmospheres in an inductively coupled plasma system. Starting from a pure CF4 gas that etches Ge and Si0.8Ge0.2 with a good selectivity to silicon, the modification of gas mixture was also investigated. A possible mechanism based on the favored action of CF4 is investigated. Relative etch rate between Si, Ge and Si0.8Ge0.2 are explained with etch rate reductions achieved by selective CF4 plasma chemistries with Ar/O2. Etched profile, surface roughness was examined and measured by using SEM and AFM technique.