Surface Electronic Energy States of Phosphorous-Doped CVD Diamonds and Electron Emission

Abstract

Phosphorous (P) -doped CVD diamonds are expected to be good n-type semiconductor diamonds. However, the resistivity of P-doped intrinsic diamonds is very high due to a large ionization energy of impurity phosphorus. When phosphorus is doped in a large amount (B∼10 20 cm −3), the resistivity reduces with a pseudo-n-type conductivity at temperatures above 400 K. These intrinsic n-type and pseudo-n-type P-doped diamond single crystal surfaces have been studied recently by electron spectroscopic methods. The surface electronic energy states of both intrinsic n-type and pseudo-n-type diamond surfaces have been examined by electron spectroscopic methods. The mechanism of field emission from the pseudo-n-type diamond surface has been elucidated.