Swift heavy Ion irradiation of amorphous semiconductors

Abstract

In this chapter, the interaction of swift heavy ions (SHIs) with amorphous semiconductors is reviewed. While crystalline Si and Ge are insensitive to SHI irradiation, the higher electron-phonon coupling efficiency of their amorphous counterparts can result in ion track formation due to transient melting along the ion path. The cumulative effect of multiple SHI irradiations can then lead to plastic deformation and porous layer formation. After a review of plastic deformation in amorphous materials (including a theoretical description), results for ion track formation, plastic deformation and porous layer formation in selected amorphous Group IV and III-V materials are summarized. Complementary molecular dynamics simulations provide additional understanding and in combination with experiment enables new mechanistic insight at the atomic scale.