Multiple independent gate field effect transistors - Device, process, applications

Abstract

Double gate SOI devices have been widely researched to replace the current planar SOI devices. These double gate device structures have multiple gate surfaces but a single gate electrode. Recently double gate structures with independent gate structures have been studied. Independent gate devices offer additional advantages and challenges. This paper will review some of the challenges and advantages of such structures covering process integration, device architecture, compact models and circuit design. Experimental results of device, circuit and performance will be presented.