Abstract
A facile electrodeposition method was developed to prepare Co-BiVO4 thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm-2 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO4.
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CITATION STYLE
APA
Liu, G., Li, F., Zhu, Y., Li, J., & Sun, L. (2020). Cobalt doped BiVO4with rich oxygen vacancies for efficient photoelectrochemical water oxidation. RSC Advances, 10(48), 28523–28526. https://doi.org/10.1039/d0ra01961e
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