Abstract
A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaN,As1-x/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaNxAs1-x alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies. © 2000 American Institute of Physics.
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CITATION STYLE
Buyanova, I. A., Pozina, G., Hai, P. N., Thinh, N. Q., Bergman, J. P., Chen, W. M., … Tu, C. W. (2000). Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy. Applied Physics Letters, 77(15), 2325–2327. https://doi.org/10.1063/1.1315632
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