A low power energy-efficient precision CMOS temperature sensor

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Abstract

This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode is proposed, which dynamically matches all current sources in the front-end circuit. The first-order fitting and third-order fitting are used to calibrate the output results. On the basis of simulation results, the sensor achieves 3σ-inaccuracies of +0.18/-0.13 °C from -55 °C to +125 °C. Measurement results demonstrate sensor 3σ-inaccuracies of -0.2 °C from 0 °C to +100 °C. The circuit is implemented in 0.18 μm CMOS, and consumes 6.1 μA with a 1.8 V supply voltage.

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APA

Wei, R., & Bao, X. (2018). A low power energy-efficient precision CMOS temperature sensor. Micromachines, 9(6). https://doi.org/10.3390/mi9060257

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