High-Power Broad-Area Diode Lasers and Laser Bars

Abstract

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers (λ = 650 nm − 1060 nm) in connection with the achievements of mounted single-stripe emitters in recent years. In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.