The oxidation kinetics of thin polycrystalline Ni films is of fundamental interest as well as being relevant for potential applications. It was investigated between 250 and 500°C for 10-150 nm thick films. Even for the thinnest films, oxidation was found to be diffusion controlled. The high density of grain boundaries in the formed NiO layer leads to a tracer diffusion coefficient that is higher than reported in the literature, indicating accelerated Ni diffusion along the grain boundaries. Cr segregation to the bottom interface in doped-NiO films hindered the acceleration of the oxidation of thin films.
CITATION STYLE
Unutulmazsoy, Y., Merkle, R., Fischer, D., Mannhart, J., & Maier, J. (2017). The oxidation kinetics of thin nickel films between 250 and 500 °c. Physical Chemistry Chemical Physics, 19(13), 9045–9052. https://doi.org/10.1039/c7cp00476a
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