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High-permittivity metal-insulator-metal capacitors with TiO 2 rutile dielectric and RuO 2 bottom electrode

  • Hudec B
  • Husekova K
  • Dobrocka E
  • et al.
IOP Conference Series: Materials Science and Engineering (2010) 8 012024
DOI: 10.1088/1757-899x/8/1/012024
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Abstract

... The TiO2 films were grown in a flow-type ALD reactor [8] at temperature 425 °C. In order to synthesize the films , the substrates were exposed to the TiCl4 vapor (for 2 s), purged in the flow of pure nitrogen (for 2 s), exposed to the H2O vapor (for 2 s), and again purged in the flow ...

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APA

Hudec, B., Husekova, K., Dobrocka, E., Lalinsky, T., Aarik, J., Aidla, A., & Frohlich, K. (2010). High-permittivity metal-insulator-metal capacitors with TiO 2 rutile dielectric and RuO 2 bottom electrode. IOP Conference Series: Materials Science and Engineering, 8, 012024. https://doi.org/10.1088/1757-899x/8/1/012024

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