Abstract
We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behavior of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Tawara, T., Gotoh, H., Akasaka, T., Kobayashi, N., Makimoto, T., & Saitoh, T. (2005). Observation of cavity polaritons in InGaN quantum well microcavities. Physica Status Solidi C: Conferences, 2(2), 809–812. https://doi.org/10.1002/pssc.200460308
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