Transient analysis of photomultiplication-type organic photodiodes

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Abstract

Photomultiplication-type organic photodetectors have emerged as a class of next generation solution-processed photodetectors with high gain. Despite this promising feature, the reported photodectors still suffer from relatively large dark currents at high bias voltages. To overcome this drawback, a mechanistic understanding of the photomultiplication effect in organic photodiodes is required. In this work, we advanced the performance of photomultiplication-type organic photodetectors by tuning the active layer composition and interfacial layers. The optimized devices exhibit small dark currents and flat dark current-voltage curves under the reverse bias condition up to -10 V. The optimized photodetectors also reached an ultra-high responsivity of 23.6 A/W and the specific detectivity of 1.04 × 1012 Jones at -10 V. More importantly, we investigated the photomultiplication process with multiple transient techniques and revealed that the photoconductive gain effect is a slow process, which relies on the photo-Schottky effect enabled by charge carrier tunneling and the accumulation of holes. Furthermore, we also demonstrated prototypical pulsed-light detection based on the optimized devices, which showed great potential for real applications.

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Bai, S., Li, R., Huang, H., Qi, Y., Xu, Y., Song, J., … Lin, Q. (2022). Transient analysis of photomultiplication-type organic photodiodes. Applied Physics Reviews, 9(2). https://doi.org/10.1063/5.0083361

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