Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS

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Abstract

This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of $LC$ tank oscillators, which is why any radiation effect in these passive components can have a detrimental impact on the performance of clock generation circuits. Different experiments performed to localize and characterize the single-event effect (SEE) response in a radiation-hardened PLL circuit are discussed and presented together with a hypothesis for the underlying physical mechanism.

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Biereigel, S., Kulis, S., Leroux, P., Moreira, P., Kolpin, A., & Prinzie, J. (2021). Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS. IEEE Transactions on Nuclear Science, 68(11), 2587–2597. https://doi.org/10.1109/TNS.2021.3121029

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