A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces

Abstract

Building stretchable memory is an effective strategy for developing next-generation memory technologies toward stretchable and wearable electronics. Here we demonstrate a universal strategy for the fabrication of high performance stretchable polymer memory via tailoring surface morphology, in which common conjugated polymers and sharp reduced graphene oxide (r-rGO) films are used as active memristive layers and conductive electrodes, respectively. The fabricated devices feature write-once-read-many-times (WORM) memory, with a low switching voltage of 1.1 V, high ON/OFF current ratio of 104, and an ideal long retention time over 12000 s. Sharp surface-induced resistive switching behavior has been proposed to explore the electrical transition. Moreover, the polymer memory show reliable electrical bistable properties with a stretchability up to 30%, demonstrating their great potential candidates as high performance stretchable memory in soft electronics.