High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs-GaAs-InGaAs- InAs heterostructure diode laser operation

Abstract

Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs-GaAs-InGaAs-InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strained-layer InGaAs quantum wells (QWs) to the single InAs QD layer to assist carrier collection and thermalization. A QW-assisted single-layer InAs QD laser, a QD+QW laser, is demonstrated that operates cw (300 K), and at diode length 150 μm in pulsed operation exhibits gain as high as ∼100cm -1. © 2002 American Institute of Physics.