Abstract
In the proposed work, JLTMCSG Tunnel FET has been analyzed and it is shown that the device can efficiently suppress DIBL and get better carrier transport efficiency. We study the linearity of TMG and DMG based on linearity parameters such as transconductance gm and 1-dB compression point. We also investigate the radio frequency performance for JLTMCSG Tunnel FET for various parameters such as cutoff frequency fT and analog performance such as C-V, DIBL, and threshold voltage roll-off.
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Biswal, S. M., Swain, S. K., Sahoo, J. R., Swain, A. K., Routaray, K., Nanda, U., & Biswal, B. (2019). A comparative study of junctionless triple-material cylindrical surrounding gate tunnel FET. In Lecture Notes in Electrical Engineering (Vol. 521, pp. 793–801). Springer Verlag. https://doi.org/10.1007/978-981-13-1906-8_80
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