100 NM thick aluminum nitride based piezoelectric nano switches exhibiting 1 MV threshold voltage via body-biasing

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Abstract

This paper reports on the first demonstration of aluminum nitride (AlN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AlN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has resulted in a repeatable threshold voltage of 1 mV. The nanoswitch has been cycled to > 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability.

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APA

Sinha, N., Guo, Z., Felmetsger, V. V., & Piazza, G. (2010). 100 NM thick aluminum nitride based piezoelectric nano switches exhibiting 1 MV threshold voltage via body-biasing. In Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop (pp. 352–355). Transducer Research Foundation. https://doi.org/10.31438/trf.hh2010.94

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