100 NM thick aluminum nitride based piezoelectric nano switches exhibiting 1 MV threshold voltage via body-biasing

Abstract

This paper reports on the first demonstration of aluminum nitride (AlN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AlN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has resulted in a repeatable threshold voltage of 1 mV. The nanoswitch has been cycled to > 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability.