Influence of structural properties on the ferroelectric behavior of hexagonal AlScN

Abstract

The direct impact of structural quality on the ferroelectric properties of hexagonal Al1-xScxN with an Sc-content of x = 0.3 was investigated using dynamic hysteresis measurements, high-resolution x-ray diffraction (HRXRD), and atomic force microscopy. The films investigated were deposited on p-doped (001)-Si substrates by reactive pulsed DC magnetron sputtering under different gas mixtures to vary the structural quality and surface morphology between samples. Misoriented grains were identified as ferroelectrically inactive, as these grains resulted in an underestimation and distortion of the ferroelectric quantities. In fact, a high amount of misoriented volume was found to have a significant effect on the coercive electric field, as this is mainly determined by the crystal strain in the ferroelectric [0001]-oriented regions, independent of its origin. Furthermore, it was concluded that the crystal quality does not have a pronounced effect on the coercive field strength. Conversely, the polarization in the film is mainly determined by the crystal quality, as a difference of 1° in the HRXRD FWHM of the ω-scan resulted in a 60% loss of polarization. The amount of polarization was influenced to a lesser extent by the misoriented grains since the ferroelectric volume of the layers was only slightly overestimated. This reveals that optimizing reproducible and transferable properties, such as crystal quality and surface morphology, is more reasonable, as the film with the lowest misoriented volume and the highest degree of c-axis orientation showed the highest polarization.