Since stress is a major factor in the operation, performance, and reliability in AlGaN/GaN HEMT devices, a thorough understanding of the impact of stress on performance and reliability can lead to improvements in device design. Mechanical wafer bending is a cost-effective method to investigate the effects of stress on semiconductor devices which has been extensively used to isolate and study the effect of stress in strain-engineered Si MOSFETs. In this chapter, a systematic study of the effects of externally applied mechanical stress on the AlGaN/GaN HEMT channel resistance and gate current is presented to provide insights into the physical mechanisms responsible for stress-related performance and reliability issues.
CITATION STYLE
Chu, M., Koehler, A. D., Gupta, A., Parthasarathy, S., Baykan, M. O., Thompson, S. E., & Nishida, T. (2013). Strain effects in AlGaN/GaN HEMTs. In Materials and Reliability Handbook for Semiconductor Optical and Electron Devices (pp. 381–429). Springer New York. https://doi.org/10.1007/978-1-4614-4337-7_12
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