Impact of p-Type NiO Pocket and Ultra-Thin Graphene Layer on the RF Performance of β-Ga 2 O 3 MOSFET

Abstract

In this work, the RF performance of proposed p-type NiO pocket based β -Ga 2 O 3 /graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (g m ), output conductance (g d ), intrinsic capacitances (gate to drain capacitance C gd and gate to source capacitance C gs ) and cut-off frequency (f T ). The large signal CW RF performance is also investigated which includes output power (P OUT ), power-added efficiency (PAE) and power gain (G p ) as a key FOMs. The key idea behind this work is to demonstrate a device with improved RF performance and low leakages. The RF characteristics of the proposed device have been studied to show its utility in the wireless applications. The introduction of ultra-thin graphene layer beneath the channel region results in 0.85 times lower C gs , 1.04 times improvement in f T and 1.5 dB superior G P in comparison to the p-type NiO pocket based β -Ga 2 O 3 (NiO-GO) MOSFET. The proposed structure shows superior RF performance with low leakages.