Luminescent study of recombination processes in the single-crystal silicon and silicon structures fabricated using high-efficiency solar cell technology

Abstract

Some results of the author’s researches in the last decade of the luminescence in the region of the fundamental absorption edge (edge luminescence) of the single-crystal silicon (c-Si), including structures which were made using high-efficiency solar cell technology, are summarized and systematized. This chapter presents experimental evidences and justifications of the dominant mechanism of radiative recombination in c-Si and of the dependence of the intensity of the edge luminescence on the intensity of its excitation. Considerable consideration is given to the study of recombination parameters at high excitation intensities of the edge luminescence in the structures fabricated using high-efficiency solar cell technology.