CuInS2 layer deposition through nebulizer spray technique for solar cell fabrication

Abstract

CuInS2 (CIS) thin films were fabricated by jet nebulizer spray technique at various substrate temperatures such as 250, 300, 350 and 400 °C. The XRD revealed the formation of chalcopyrite crystalline phase with (1 1 2) preferential orientation. The film prepared at 300 °C has better crystallinity with minimum dislocation density and strain. The microstructure of the prepared CIS thin films was investigated by means of scanning electron microscope (SEM). The elemental quantification and stoichiometric ratio of the CIS films were confirmed by EDS. The conductivity of CIS thin films was carried out by four probe method and it showed that all the films were in semiconducting nature. The optical band gap was found using Tauc plot and it was varied from 1.3 to 1.45 eV. A peak around 298 cm−1 was observed in Raman spectra attributed to the mixture of both CH- and CA-ordering.