Group II–VI Semiconductors

Abstract

II–VI semiconductorsSemiconductors(compounds formed by group IIB metallic elements (Cd, Zn, and Hg) with group VI nonmetallic elements (O, S, Se, and Te)) have aroused intense interest in research and development. Because of its prominent optoelectronic properties for applicationsApplicationssuch as in thin-film photovoltaics, nanophotodetectorsPhotodetectors, and lasers, cadmium sulfide (CdS)Cadmium sulfide (CdS)has been in the spotlight. Due to its unique properties and applicationsApplicationsin nanoscience and nanotechnology as phosphors, sensors, and optoelectronic devices, zinc oxide (ZnO) has drawn the attention as a strategic and safe technological material. Moreover, on account of their unique capability of behaving as both wide-bandgap (1.5–3.5 eV) and narrow-bandgap (0–1.5 eV) materials, II–VI compounds are utilized in applicationsApplicationssuch as photoconductors, ultrasonic transducers, and Hall effectHall effectdevices. Mercury telluride (HgTe) has been placed in the foreground due to its very high Hall mobility and mobility ratio. In this chapter, a description of the processing techniquesProcessing techniques, properties, and applicationsApplicationsof CdS, ZnO, and HgTe (and related ternary and quaternary compoundsQuaternary compounds), both as thin films and nanostructured forms, is detailed. Studies on the resulting materials morphologies and optoelectronic properties—from previous works by other authors as well as from the authors’ investigations—mainly focusing on CdS prepared by the chemical bath depositionChemical bath deposition(CBD) technique, are presented. The chapter is also intended to provide the readers with both seminal and recent bibliographical references on the topics.