Interfacial engineering of perovskite quantum-dot light-emitting devices using alkyl ammonium salt layer

Abstract

Herein, we demonstrated that alkyl ammonium salts containing the Br anion, oleylamine bromide (OAM-Br), was used as an interfacial engineering layer between the hole transport layer (HTL) and the perovskite QDs to passivate cation-and anion-defects in perovskite QDs. The OAM-Br interfacial layer enables a high PLQY due to the suppression of surface defects in perovskite QDs. Thus, the CsPbBr QD-LEDs with an OAM-Br layer exhibited a 3 maximum power efficiency of 3.35 lm/W and an external quantum efficiency (EQE) of 2.08% that which are higher efficiencies than those of the LEDs without an OAM-Br layer.