The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness DD » 1 mm formed after electrochemical and chemical treatment of the macropore walls.
CITATION STYLE
Karachevtseva, L. A. (2001). Electrical properties of macroporous silicon structures. Semiconductor Physics, Quantum Electronics and Optoelectronics, 4(1), 40–43. https://doi.org/10.15407/spqeo4.01.040
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