Electrical properties of macroporous silicon structures

  • Karachevtseva L
N/ACitations
Citations of this article
5Readers
Mendeley users who have this article in their library.

Abstract

The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness DD » 1 mm formed after electrochemical and chemical treatment of the macropore walls.

Cite

CITATION STYLE

APA

Karachevtseva, L. A. (2001). Electrical properties of macroporous silicon structures. Semiconductor Physics, Quantum Electronics and Optoelectronics, 4(1), 40–43. https://doi.org/10.15407/spqeo4.01.040

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free