Fabrication of high performance top-gate complementary inverter using a single carbon nanotube and via a simple process

Abstract

High performance complementary inverters have been fabricated using single-walled carbon nanotubes. The Al2 O3 top-gate dielectric is grown via first depositing an Al film followed by complete oxidation of the film. It is shown that the quality of the Al2 O3 film can be significantly improved by annealing at 400 °C, and stable p -type and n -type carbon nanotube field-effect transistors (CNTFETs) may be fabricated using either Pd (p -type) or Al (n -type) electrodes. High performance complementary inverter is demonstrated by integrating the p -type and n -type CNTFETs on the same carbon nanotube, and a gain of about 3.5 is achieved. © 2007 American Institute of Physics.