Effect of the Silicon Drift Detector on EDAX Standardless Quant Methods

  • Eggert F
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Abstract

Two standardless quantitative methods for evaluating EDS X-ray spectra were investigated in regards their basic metrics. Both methods have similar total errors, but the error contributions are from different sources. In the P/B-based method, error is more related to counting statistics and therefore can benefit from high count rates achievable with modern silicon drift detectors. To reduce systematic uncertainties in the net-count-based standardless approach, measured values need to be supported by data in a previously measured database. Using the P/B-based method, it is now possible to achieve standardless EDS quantification within ±10% relative deviation from true composition for 95% of results.

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Eggert, F. (2020). Effect of the Silicon Drift Detector on EDAX Standardless Quant Methods. Microscopy Today, 28(2), 34–39. https://doi.org/10.1017/s1551929519001196

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