Real-time monitoring of surface chemistry during plasma processing

Abstract

Techniques available for real time, in situ monitoring of surface chemistry during plasma processing are reviewed. Emphasis is given to recent uses of attenuated-total-reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study surface bond vibrations during plasma cleaning and passivation of Si and GaAs surfaces. Examples are chosen to demonstrate the utility of real-time monitoring of surfaces for developing and optimizing plasma processes used in manufacturing of electronic and optoelectronic devices. © 1994, Walter de Gruyter. All rights reserved.