Numerical Simulation of Varied Buffer Layer of Solar Cells Based on Cigs

Abstract

Numerical simulation has been used to investigate the effect of different buffer layer components on the performance of CuInGaSe2 solar cells with SCAPS-1D software. The main photovoltaic parameters of simulated devices: open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h), areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This result is validated by experimental results (20%). At 300 K, when the thickness of the buffer layer (CdS, ZnS, ZnSe, InSe2) increases from 100 nm to 500 nm, with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K, with the other parameters maintained constant, both open circuit voltage and conversion efficiency also decrease. The effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases of 3% than a single buffer CdS.