CITATION STYLE
Poindexter, E. H., Caplan, P. J., & Gerardi, G. J. (1988). Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon. In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (pp. 299–308). Springer US. https://doi.org/10.1007/978-1-4899-0774-5_32
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