Impact of deposition pressure and two-step growth technique on the photoresponsivity enhancement of polycrystalline BaSi2 films formed by sputtering

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Abstract

We investigate the influence of deposition pressure in the range 0.25-1.0 Pa on the photoresponsivity of 200 nm thick BaSi2 films grown by sputtering at 600 °C. BaSi2 films formed at 0.8 Pa exhibit a high photoresponsivity. The deposited Ba-to-Si atomic ratio depends significantly on the sputtering pressure. That's why the pressure influences the photoresponsivity. BaSi2 films grown by a two-step growth technique show much higher photoresponsivity almost equivalent to those grown by molecular beam epitaxy. The photoresponsivity reaches 0.75 A W-1 at 2.0 eV at a bias voltage of 0.5 V applied between the top and bottom electrode.

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Matsuno, S., Nemoto, T., Mesuda, M., Kuramochi, H., Toko, K., & Suemasu, T. (2019). Impact of deposition pressure and two-step growth technique on the photoresponsivity enhancement of polycrystalline BaSi2 films formed by sputtering. Applied Physics Express, 12(2). https://doi.org/10.7567/1882-0786/aafc70

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