Abstract
Cu(In,Ga)Se 2/CdS/ZnO thin-film solar cells were exposed to doses up to 5×10 8rad(Si) of 50 keV x rays. Device performance consistently showed very little degradation, implying that previously observed radiation-induced performance reductions were likely the result of displacement damage. Subsequent experiments showed that cells recovered to near beginning-of-life performance with only short anneals under 50°C. © 2002 American Institute of Physics.
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CITATION STYLE
Tringe, J., Nocerino, J., Tallon, R., Kemp, W., Shafarman, W., & Marvin, D. (2002). Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells. Journal of Applied Physics, 91(1), 516–518. https://doi.org/10.1063/1.1417986
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