Performance Comparison of III–V and Silicon FinFETs for Ultra-Low Power VLSI Applications

Abstract

In this paper, the device performance of a three-dimensional (3D) FinFET is investigated and a suitable comparison is performed by employing conventional Silicon and III-V materials like InAs and InGaAs in the channel region. We have discussed the DC and RF characteristics of the triple gate FinFET of 22 nm technology. III-V materials have witnessed a superior DC performance in terms of saturation current with a negative threshold voltage. In addition, analog and RF performance parameters of FinFET such as channel charge concentration and gate and body capacitances are also been discussed in the paper. III–V material-based FinFET is having lower gate capacitance over its silicon counterpart and in turn III–V material shows its better candidacy for future low-power applications.