In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal-oxide-semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the simulated physical models and associated model parameters have been well calibrated with the reported experimental results of GaN n-channel NWFET and the simulated typical electrical parameters match the measured data. According to the simulation results, the GaN GAA vertical nanowire CMOS inverter exhibits rail-to-rail operation, low static power dissipation, large noise margins, high thermal stability and good scalability.
CITATION STYLE
Liu, X., Yang, J., Li, J., Lin, F., Li, B., Zhang, Z., … Huang, M. (2022). GaN-Based GAA Vertical CMOS Inverter. IEEE Journal of the Electron Devices Society, 10, 224–228. https://doi.org/10.1109/JEDS.2022.3149932
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