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Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

Applied Physics Letters (2012) 101(24)
DOI: 10.1063/1.4770364
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Abstract

We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ=320-350nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E⊥ c to E∥c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence. © 2012 American Institute of Physics.

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APA

Netzel, C., Knauer, A., & Weyers, M. (2012). Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers. Applied Physics Letters, 101(24). https://doi.org/10.1063/1.4770364

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