Observation of Over-Layer deposition on HgCdTe Epilayers grown by Vertical dipping Liquid Phase Epitaxy

Abstract

The HRXRD and FTIR characterization of HgCdTe epilayers grown by vertical Dipping Liquid Phase Epitaxy was analyzed to indicate the presence of < 2 μm low-x HgCdTe over layer. A higher angle shoulder in HRXRD rocking curve and a graded cut-on as well as a double fringe pattern in FTIR was observed. Removal of ~2μm surface layer by chemical etching improved the FTIR and HRXRD curves.