Abstract
We simulate the spin transport properties in Schottky Barrier FET by ensemble Monte Carlo Method. Based on the three subbands approximations of 2DEG a more accurate model to calculate the spin precession frequency is adopted. With intra-subband and inter-subband scatterings fully considered, the three subbands approximation is compared with the single band approximation. We also examine the influence of the external electric field on the dephasing of the injected spin polarization. The simulation results can provide some guidance for the future design of SpinFET.
Cite
CITATION STYLE
Liu, J., Du, G., Cao, J., Xia, Z., Wang, Y., Han, R., & Liu, X. (2007). Simulation of spin transport properties in schottky barrier FET using Monte Carlo method. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 253–256). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_60
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