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Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

Springer International Publishing, (2018)
DOI: 10.1007/978-3-319-62870-7
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Abstract

The results of simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are presented. The research allowed to determine the optimal thickness of the AlGaN barrier layer for achieving high microwave capacity implementation.

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Proceedings of the Scientific-Practical Conference “Research and Development - 2016.” (2018). Proceedings of the Scientific-Practical Conference “Research and Development - 2016.” Springer International Publishing. https://doi.org/10.1007/978-3-319-62870-7

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