Performance analysis of double-gate carbon-nanotube fet and mosfet for high speed integrated circuits design

Abstract

This paper explains the detailed structure as well as performance of DG-CNTFET (Double Gate Carbon Nanotube Field Effect Transistor) and its performance is compared with the DG-MOSFET (Double Gate Metal Oxide Semiconductor Field Effect Transistor). Various parameters like I-V characteristics, ON current, OFF current and ON to OFF current ratio have been evaluated using nano-TCAD ViDES. Also, the transport description of DG-MOSFET and DG-CNTFET has been described in detail. It has been observed that DG-CNTFET has lower OFF current and higher ON current in comparison to the DG-MOSFET. The higher ON current of DG-CNTFET depicts that it requires less time to turn on the device in comparison with DG-MOSFET. Also, OFF current of the DG-CNTFET is lesser as compared to MOSFET. The DG-CNTFET’s higher ON to OFF current ratio outperforms the DG-MOSFET in term of switching speed of the device. It is proposed that CNTFET can be used as an alternative of MOSFETs for high speed Integrated Circuit (IC) design.