Abstract
In this study, ytterbium thin films of various thicknesses were depositedon (100) silicon substrates. Transmission electron microscopy (TEM)was used to characterize the structure and composition of the thinfilms and the interface between the thin film and the silicon substrate,which was found to contain an amorphous interlayer. TEM samples wereprepared using a small-angle cleavage technique to avoid any artifactsinduced by ion milling. The preparation of ytterbium silicide thinfilms and the effect of annealing on the structure and compositionof the films are discussed.
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CITATION STYLE
Nowak, J. D., Song, S. H., Campbell, S. A., & Carter, C. B. (2008). TEM Study of Ytterbium Silicide Thin Films. In Microscopy of Semiconducting Materials 2007 (pp. 333–336). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_73
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