Structural, Electrical and Optical Properties of Mg-Ni Thin Films for Hydrogen Storage Applications

Abstract

Using the magnetron sputtering technique, Mg-Ni (150nm) bilayer thin films were deposited onto the simple, and ITO coated glass substrates. To obtain proper mixing and inter diffusion of thin film structure, annealing of the prepared thin films was made at constant temperature 523 K. The surface morphology of thin films confirms the uniform deposition of the Mg-Ni thin films on substrates. The Raman spectroscopy of thin films shows that the intensity of Raman peaks is decreased as the hydrogen pressure increases and variation in the intensity peak confirms the existence of hydrogen in the prepared film. The d.c. conductivity of thin films were observed at different hydrogen pressure (10-40 psi) for both the as-deposited and annealed thin films and the variation in the conductivity after hydrogenation was found out. In Uv-Vis spectroscopy, it was found that the optical bandgap of thin films increases with the increase of hydrogen pressure. The deviations in the structural, electrical and optical properties after hydrogenation indicate that Mg-Ni thin films may be used for solid state hydrogen storage applications.